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  6. HUF75329D3ST

onsemi | HUF75329D3ST

Manufacturer Part #

HUF75329D3ST

N-Channel 20 A 55 V 0.026 Ohm SMT UltraFET Mosfet- TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi HUF75329D3ST - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 128|W
Qg Gate Charge: 50nC
Package Style:  TO-252AA
Mounting Method: Surface Mount
Features & Applications

The HUF75329D3ST is a 20 A 55 V 0.026 Ω N-Channel power MOSFETs are manufactured using the innovative UltraFET® process

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

Features:

  • 20 A, 55 V
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve

Applications:

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Relay drivers
  • Lowvoltage bus switches
  • Power management
  • Battery operated products

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,200.00
USD
Quantity
Unit Price
2,500
$0.48
5,000
$0.475
7,500
$0.47
12,500+
$0.46
Product Variant Information section