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Référence fabricant
HUF75345P3
N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount | ||||||||||
| Code de date: | 2519 | ||||||||||
onsemi HUF75345P3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=HUF75345P3&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/huf75345p3-onsemi-9722166
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=HUF75345P3&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/huf75345p3-onsemi-9722166
onsemi HUF75345P3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.007Ω |
| Rated Power Dissipation: | 325|W |
| Qg Gate Charge: | 275nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Fonctionnalités et applications
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features:
- 75 A, 55 V
- Simulation models
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance SPICE and SABER Models Available on the Web
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Applications:
- TBA
Emballages disponibles
Qté d'emballage(s) :
800 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount