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Référence fabricant

HUF75639P3

N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi HUF75639P3 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.025Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 130nC
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The HUF75639P3 is a N-Channel power MOSFET and is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Features:

  • 56 A, 100 V
  • Simulation models
  • Temperature Compensated PSPICE® and SABER™ Electrical Models
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating CurveThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

Applications:

  • TBA

View the complete HUF756x series of MOSFETs

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
800
Multiples de :
800
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Des droits de douane peuvent s’appliquer en cas d’expédition vers les États-Unis. Une estimation des droits tarifaires sera dans ce cas calculée au moment du paiement.
Total 
984,00 $
USD
Quantité
Prix unitaire
800
$1.23
1 600
$1.22
2 400
$1.21
4 000+
$1.20
Product Variant Information section