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Manufacturer Part #
IPD50N08S413ATMA1
80V,50A,13.2mohm,TO-252,MOSFET
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2520 | ||||||||||
Product Specification Section
Infineon IPD50N08S413ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
PCN UPDATE
06/22/2023 Details and Download
Fabrication Site Change
04/26/2023 Details and Download
Detailed change information Subject: Several changes affecting OptiMOS-T2 Power-Transistor technology Reason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in wafer fab Regensburg, we have extended our FE capacity.Ensure delivery capability by establishing SFET3 technology at well known
Part Status:
Active
Active
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Infineon IPD50N08S413ATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 13.2mΩ |
| Rated Power Dissipation: | 72W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 50A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 6.4ns |
| Rise Time: | 3.6ns |
| Fall Time: | 11.8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | OptiMOS |
| Input Capacitance: | 1316pF |
| Series: | OptiMOS-T2 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
2,500
$0.45
5,000
$0.445
7,500+
$0.44
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount