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Référence fabricant
IRFH5210TRPBF
Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :PQFN 5 x 6 mm Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRFH5210TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5210TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfh5210trpbf-infineon-1003290
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5210TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfh5210trpbf-infineon-1003290
Infineon IRFH5210TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 14.9mΩ |
| Rated Power Dissipation: | 3.6|W |
| Qg Gate Charge: | 39nC |
| Style d'emballage : | PQFN 5 x 6 mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier (IR) deals with advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components.
The new power MOSFETs, featuring IR’s latest silicon technology to deliver benchmark performance are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC Switch Mode Power Supplies (SMPS), and motor drive switches. Available in a wide range of voltages from 40 V to 250 V, the devices provide various levels of on-state resistance and gate charge to offer customers optimized performance and cost for a given application.
IRFH5210TRPBF is part of the IRFH52 Series family with 100 V Single N-Channel HEXFET Power MOSFET in a PQFN package.This device is lead free.
Features:
- Low RDSon (= 14.9 mO at Vgs = 10 V) (Lower Conduction Losses)
- Low Thermal Resistance to PCB (= 1.2°C/W) (Enable better thermal dissipation)
- 100% Rg tested (Increased Reliability)
- Low Profile (= 0.9 mm) (results in Increased Power Density)
- Industry-Standard Pinout (Multi-Vendor Compatibility)
- Compatible with Existing Surface Mount Techniques (Easier Manufacturing)
- RoHS Compliant Containing no Lead, no Bromide and no Halogen (Environmentally Friendlier)
- MSL1, Industrial Qualification (Increased Reliability)
Applications:
- Secondary Side Synchronous Rectification
- Inverters for DC Motors
- DC-DC Brick Applications
- Boost Converters
To learn more about the IRFH52 series products, Click Here.
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
PQFN 5 x 6 mm
Méthode de montage :
Surface Mount