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Infineon | IRFR15N20DTRPBF

Manufacturer Part #

IRFR15N20DTRPBF

Single N-Channel 200V 165 mOhm 27 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFR15N20DTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 165mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 17A
Turn-on Delay Time: 9.7ns
Turn-off Delay Time: 17ns
Rise Time: 32ns
Fall Time: 8.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.5V
Input Capacitance: 910pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
6000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,420.00
USD
Quantity
Unit Price
2,000
$0.58
4,000
$0.575
6,000
$0.57
8,000
$0.565
10,000+
$0.555
Product Variant Information section