Référence fabricant
IRFRC20TRLPBF-BE3
600V,2A,4400MOHM,DPAK - COO: TAIWAN
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
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Vishay IRFRC20TRLPBF-BE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Tuesday September 30, 2025
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
Vishay IRFRC20TRLPBF-BE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 4.4Ω |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 18nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 23ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 350pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount