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Manufacturer Part #

STH315N10F7-2

STH315N10F7 Series 100 V 180 A 2.3 mOhm N-Ch STripFET™ F7 Power Mosfet - H PAK-2

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH315N10F7-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 315|W
Qg Gate Charge: 180nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,780.00
USD
Quantity
Unit Price
1,000
$2.78
2,000+
$2.75
Product Variant Information section