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Manufacturer Part #

STP4N90K5

STP4N90K5 Series 900 V 3 A N-Channel MDmesh™ K5 Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP4N90K5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 2.1Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3A
Turn-on Delay Time: 10.5ns
Turn-off Delay Time: 26.4ns
Rise Time: 11.8ns
Fall Time: 25.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 173pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Total
$975.00
USD
Quantity
Unit Price
1
$1.06
40
$1.04
200
$1.00
750
$0.975
3,000+
$0.92
Product Variant Information section