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STMicroelectronics | STP4NK80Z

Référence fabricant

STP4NK80Z

N-Channel 800 V 3.5 Ohm 22.5 nC SuperMESH™ MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP4NK80Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.5Ω
Rated Power Dissipation: 80|W
Qg Gate Charge: 22.5nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP4NK80Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application

View the Complete family of STP4 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
34 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
3 840,00 $
USD
Quantité
Prix unitaire
50
$1.99
200
$1.96
750
$1.94
1 250
$1.92
2 500+
$1.89
Product Variant Information section