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STMicroelectronics | STW30N65M5

Manufacturer Part #

STW30N65M5

N-Channel 650 V 0.139 Ohm Flange Mount MDmesh V Power MosFet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STW30N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.139Ω
Rated Power Dissipation: 140|W
Qg Gate Charge: 64nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The STW30W65M5 MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • Worldwide best RDS(on)*area
  • Higher VDSS rating
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
  • High dv/dt capability

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$1,860.00
USD
Quantity
Unit Price
30
$3.20
120
$3.15
450
$3.10
750
$3.08
1,500+
$3.02
Product Variant Information section