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Taiwan Semiconductor | TSM850N06CX RFG

Manufacturer Part #

TSM850N06CX RFG

MOSFET 60V, 3A, Single N-Channel Power MOSFET

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2441
Product Specification Section
Taiwan Semiconductor TSM850N06CX RFG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 85mΩ
Rated Power Dissipation: 1W
Qg Gate Charge: 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.3A
Turn-on Delay Time: 4.8ns
Turn-off Delay Time: 9.8ns
Rise Time: 20ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 529pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$381.00
USD
Quantity
Unit Price
3,000
$0.127
9,000
$0.124
30,000
$0.122
45,000+
$0.12
Product Variant Information section