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Référence fabricant
ZVN4210GTA
Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223
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| Nom du fabricant: | Diodes Incorporated | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2420 | ||||||||||
Diodes Incorporated ZVN4210GTA - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
*Update to Future PCN 40708*REV01: 1) Clarified part marking diagrams for SM-8 devices, and SOT26 device (P/N DRDC3105E6-7 only)2) Adding two affected part numbers: ZHCS2000TA and ZLLS2000TA (both in SOT-26 package)In order to improve product traceability, Diodes will add date code information to the part marking of part numbers. Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites. There is no change to fit or function of the affected products.
Addition of Date Code Information to Part MarkingIn order to improve product traceability, Diodes will add date code information to the part marking of below listed part numbers.Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites.There is no change to fit or function of the affected products.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=ZVN4210GTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/zvn4210gta-diodes-incorporated-3005457
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=ZVN4210GTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/zvn4210gta-diodes-incorporated-3005457
Diodes Incorporated ZVN4210GTA - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 1.8Ω |
| Rated Power Dissipation: | 2W |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 800mA |
| Turn-on Delay Time: | 4ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 8ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.4V |
| Technology: | Si |
| Height - Max: | 1.5mm |
| Length: | 6.55mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The ZVN4210GTA is a N-Channel Enchancement mode vertical DMOS FET with 0.8 A Continuous Drain Current.
Features:
- 100 Volt VDS
- Low RDS(on)= 1.5 Ω
- Operating and Storage Temperature Range Tj:Tstg: -55 to +150 °C
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Méthode de montage :
Surface Mount