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Manufacturer Part #
IAUC60N04S6N031HATMA1
Dual N-Channel 40 V 60 A 3.1 mOhm OptiMOS Power MOSFET - PG-TDSON-8-56
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:5000 per Reel Package Style:PG-TDSON-8-56 Mounting Method:Surface Mount |
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| Date Code: | 2518 | ||||||||||
Infineon IAUC60N04S6N031HATMA1 - Product Specification
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PCN Information:
Description:Introduction of an additional wafer production and wafer test location at Infineon Technologies Austria AG, Villach, Austria for product family AFET6_40V and Introduction of an additional assembly production and final test location PT Infineon Technologies Batam, Batam, Indonesia for AFET6_40V in PG-TDSON-8Reason:Due to a continuously rising demand for Infineon automotive products
Part Status:
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Infineon IAUC60N04S6N031HATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 3.1mΩ |
| Rated Power Dissipation: | 75W |
| Qg Gate Charge: | 23nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 60A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 10ns |
| Rise Time: | 2ns |
| Fall Time: | 5ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.6V |
| Technology: | OptiMOS |
| Input Capacitance: | 1479pF |
| Package Style: | PG-TDSON-8-56 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
5000 per Reel
Package Style:
PG-TDSON-8-56
Mounting Method:
Surface Mount