Free shipping within the continental US over $50. Conditions apply
Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Manufacturer Part #
SI2302DDS-T1-GE3
SI2302DDS Series N-Channel 20 V 2.6 A 0.067 Ω 3.5 nC SMT Mosfet - SOT-23
|
|
|||||||||||
|
|
|||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:3000 per Reel Package Style:SOT-23 (SC-59,TO-236) Mounting Method:Surface Mount |
||||||||||
| Date Code: | 2421 | ||||||||||
Vishay SI2302DDS-T1-GE3 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix is announcing to expand additional assembly and test capacity for LVM Commercial MOSFETs at in-house Simconix manufacturing siteReason for Change: Manufacturing capacity expansionTime Schedule: Start Shipment Date: Thursday January 1, 2026
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: Due to the fire accident in Jan-2023, the original plating subcon of Vishay Siliconix, Welnew-Wuxi, is suspended and will be entirely replaced by the new site in Shanghai, China (Welnew-Shanghai). This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai. Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments. Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Expected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Time Schedule:Start Shipment Date: Wed Jul 5, 2023
Part Status:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI2302DDS-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/de/p/semiconductors--discretes--transistors--mosfets/si2302dds-t1-ge3-vishay-8045850
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI2302DDS-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/de/p/semiconductors--discretes--transistors--mosfets/si2302dds-t1-ge3-vishay-8045850
Vishay SI2302DDS-T1-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.057Ω |
| Rated Power Dissipation: | 0.71|W |
| Qg Gate Charge: | 3.5nC |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount