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  6. IGT60R070D1ATMA4

Infineon | IGT60R070D1ATMA4

Manufacturer Part #

IGT60R070D1ATMA4

600 V 31A 125W N-Channel CoolGaN™ Enhancement-Mode Power Transistor- PG-HSOF-8-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
Infineon IGT60R070D1ATMA4 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 31A
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Gate-Source Voltage-Max [Vgss]: 1.6V
Input Capacitance: 380pF
Rated Power Dissipation: 125W
Operating Temp Range: -55°C to +150°C
Package Style:  PG-HSOF-8-3
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2000
Multiple Of:
2000
Total
$14,000.00
USD
Quantity
Unit Price
2,000+
$7.00
Product Variant Information section