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Référence fabricant
IR2127STRPBF
IR2127S Series Single 20 V 250 mA Surface Mount High and Low Side Driver SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IR2127STRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IR2127STRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/es/p/semiconductors--analog--drivers--mosfet-igbt-drivers/ir2127strpbf-infineon-2056414
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IR2127STRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/es/p/semiconductors--analog--drivers--mosfet-igbt-drivers/ir2127strpbf-infineon-2056414
Infineon IR2127STRPBF - Caractéristiques techniques
| Configuration: | High Side |
| No of Outputs: | Single |
| Peak Output Current: | 500mA |
| Supply Voltage-Max: | 20V |
| Rated Power Dissipation: | 0.625W |
| Quiescent Current: | 60µA |
| Turn-off Delay Time: | 150ns |
| Turn-on Delay Time: | 200ns |
| Rise Time: | 80ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -40°C to +125°C |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IR2127STRPBF is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Application- specific gate drive range:
Motor Drive: 12 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT lead indicates shutdown has occured
Output in phase with input
Lead-Free
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount