onsemi | MBR41H100CTG

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

Features:

• Low Forward Voltage: 0.67 V @ 125C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175C Operating Junction Temperature
• 40 A Total (20 A Per Diode Leg)
• Guard-Ring for Stress Protection
• Pb-Free Package is Available

Mechanical Characteristics:

• Case: Epoxy, Molded
• Epoxy Meets UL 94, V-0 @ 0.125 in
• Weight: Approximately 1.9 grams
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
• Applications:
• Power Supply - Output Rectification
• Power Management
• Instrumentation

Learn more about the MBR4 family of Schottky Rectifiers