MJ11033G in Tray by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

MJ11033G

MJ Series 120 V 50 A PNP High Current Darlington Silicon Transistor - TO-204

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi MJ11033G - Technical Attributes
Attributes Table
Polarity: PNP
Type: Darlington
CE Voltage-Max: 120V
Collector Current Max: 50A
DC Current Gain-Min: 1000
Package Style:  TO-3 (TO-204)
Mounting Method: Screw Mount
Features & Applications

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

Features:

  • High DC Current Gain
    • hFE = 1000 (Min) @ IC = 25 Adc
    • hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
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Pricing Section
Global Stock:
0
USA:
0
500
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
100
Multiple Of:
100
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$737.00
USD
Quantity
Unit Price
100
$7.37
200+
$7.30
Product Variant Information section