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Manufacturer Part #

FCP20N60

Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FCP20N60 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 208W
Qg Gate Charge: 98nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 20A
Turn-on Delay Time: 62ns
Turn-off Delay Time: 230ns
Rise Time: 290ns
Fall Time: 140ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 16.3mm
Length: 10.67mm
Input Capacitance: 2370pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The FCP series cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.

The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
4,000
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,850.00
USD
Quantity
Unit Price
1,000
$2.85
2,000+
$2.81
Product Variant Information section