Manufacturer Part #
FCP20N60
Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi FCP20N60 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FCP20N60 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.19Ω |
| Rated Power Dissipation: | 208W |
| Qg Gate Charge: | 98nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 62ns |
| Turn-off Delay Time: | 230ns |
| Rise Time: | 290ns |
| Fall Time: | 140ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 16.3mm |
| Length: | 10.67mm |
| Input Capacitance: | 2370pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The FCP series cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
1,000
$2.85
2,000+
$2.81
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole