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onsemi | FDB1D7N10CL7

Manufacturer Part #

FDB1D7N10CL7

FDB1D7N10CL7 Series 100 V 268 A 1.7 mOhm SMT N-Channel Mosfet - D²PAK-7

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2525
Product Specification Section
onsemi FDB1D7N10CL7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.65mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 163C
Gate-Source Voltage-Max [Vgss]: ±20V
Drain Current: 268A
Turn-on Delay Time: 39ns
Turn-off Delay Time: 85ns
Rise Time: 33ns
Fall Time: 36ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.1V
Technology: PowerTrench
Input Capacitance: 8285pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
305,600
Factory Stock:Factory Stock:
1
Factory Lead Time:
22 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$3,472.00
USD
Quantity
Unit Price
800
$4.34
1,600+
$4.28
Product Variant Information section