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onsemi | FDMS5672

Manufacturer Part #

FDMS5672

60V, 22A,11.5 OHM, NCH ULTRAFET TRENCH MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMS5672 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 11.5mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 32nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS5672 is a 60 V 11.5 mOhm N-Channel UltraFET Trench Mosfet  devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters

Features:

  • Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 10.6 A
  • Max rDS(on) = 16.5 mΩ at VGS = 6 V, ID = 8 A
  • Typ Qg = 32nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • DC-DC Conversio
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$5,850.00
USD
Quantity
Unit Price
3,000+
$1.95
Product Variant Information section