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Infineon | IPD100N06S403ATMA2

Manufacturer Part #

IPD100N06S403ATMA2

Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2437
Product Specification Section
Infineon IPD100N06S403ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 99nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 40ns
Rise Time: 70ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 7980pF
Series: OptiMOS-T2
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:Order inventroy details
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,350.00
USD
Quantity
Unit Price
2,500
$0.94
5,000
$0.925
7,500+
$0.915
Product Variant Information section