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  6. IPD80R3K3P7ATMA1

Infineon | IPD80R3K3P7ATMA1

Manufacturer Part #

IPD80R3K3P7ATMA1

Single N-Channel 800 V 3.3 Ohm 6 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD80R3K3P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.3Ω
Rated Power Dissipation: 18W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.9A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 120pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$675.00
USD
Quantity
Unit Price
2,500
$0.27
7,500
$0.265
25,000+
$0.26
Product Variant Information section