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Infineon | IPW60R041C6FKSA1

Manufacturer Part #

IPW60R041C6FKSA1

Single N-Channel 650 V 41 mOhm 290 nC CoolMOS™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2534
Product Specification Section
Infineon IPW60R041C6FKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.041Ω
Rated Power Dissipation: 481W
Qg Gate Charge: 290nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 77.5A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 130ns
Rise Time: 10ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Height - Max: 21.1mm
Length: 16.13mm
Input Capacitance: 6530pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$1,941.60
USD
Quantity
Unit Price
240
$8.09
480
$8.05
720
$8.03
960+
$8.00
Product Variant Information section