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Manufacturer Part #

IPW60R041C6FKSA1

Single N-Channel 650 V 41 mOhm 290 nC CoolMOS™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2534
Product Specification Section
Infineon IPW60R041C6FKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.041Ω
Rated Power Dissipation: 481W
Qg Gate Charge: 290nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 77.5A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 130ns
Rise Time: 10ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Height - Max: 21.1mm
Length: 16.13mm
Input Capacitance: 6530pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3
Multiple Of:
1
Total
$25.02
USD
Quantity
Unit Price
3
$8.34
15
$8.25
50
$8.18
150
$8.12
500+
$8.00
Product Variant Information section