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Référence fabricant
IPW60R041C6FKSA1
Single N-Channel 650 V 41 mOhm 290 nC CoolMOS™ Power Mosfet - TO-247-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole |
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| Code de date: | 2534 | ||||||||||
Infineon IPW60R041C6FKSA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Statut du produit:
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Infineon IPW60R041C6FKSA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.041Ω |
| Rated Power Dissipation: | 481W |
| Qg Gate Charge: | 290nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 77.5A |
| Turn-on Delay Time: | 23ns |
| Turn-off Delay Time: | 130ns |
| Rise Time: | 10ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.5V |
| Technology: | CoolMOS |
| Height - Max: | 21.1mm |
| Length: | 16.13mm |
| Input Capacitance: | 6530pF |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole