Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IRFBC40STRLPBF
Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2404 | ||||||||||
Vishay IRFBC40STRLPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFBC40STRLPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfbc40strlpbf-vishay-3953593
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFBC40STRLPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfbc40strlpbf-vishay-3953593
Vishay IRFBC40STRLPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 1.2Ω |
| Rated Power Dissipation: | 130|W |
| Qg Gate Charge: | 60nC |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRFBC40STRLPBF is a Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
Features:
- Halogen-free According to IEC 61249-2-21 Definition
- Surface Mount (IRFBC40S, SiHFBC40S)
- Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
- Available in Tape and Reel (IRFBC40S, SiHFBC40S)
- Dynamic dV/dt Rating
- 150 °C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Compliant to RoHS Directive 2002/95/EC
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount