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Manufacturer Part #
IRFI9630GPBF
Single P-Channel 200 V 35 W 29 nC Silicon Through Hole Mosfet - TO-220FP
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Tube Package Style:TO-220FP (TO-220FPAB) Mounting Method:Through Hole |
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Vishay IRFI9630GPBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
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Vishay IRFI9630GPBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.8Ω |
| Rated Power Dissipation: | 35W |
| Qg Gate Charge: | 29nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.3A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 28ns |
| Rise Time: | 27ns |
| Fall Time: | 24ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 700pF |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Through Hole