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Manufacturer Part #

SI3417DV-T1-GE3

P-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2541
Product Specification Section
Vishay SI3417DV-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 25.2mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 32nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.3A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 45ns
Rise Time: 8ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 1350pF
Package Style:  SC-74 (TSOP-6)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
18,000
USA:
18,000
6,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$408.00
USD
Quantity
Unit Price
3,000
$0.136
9,000
$0.134
12,000
$0.133
30,000
$0.131
45,000+
$0.129
Product Variant Information section