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Manufacturer Part #

SIR186LDP-T1-RE3

N-Channel 60 V 80.3 A 57 W SMT TrenchFET® Gen IV Power MOSFET - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2348
Product Specification Section
Vishay SIR186LDP-T1-RE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.4Ω
Rated Power Dissipation: 57W
Qg Gate Charge: 31.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80.3A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 26ns
Rise Time: 6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: Si
Input Capacitance: 1980pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,260.00
USD
Quantity
Unit Price
3,000
$0.42
6,000
$0.415
9,000
$0.41
15,000+
$0.405
Product Variant Information section