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STMicroelectronics | STP33N60DM2

Manufacturer Part #

STP33N60DM2

N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2443
Product Specification Section
STMicroelectronics STP33N60DM2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 190W
Qg Gate Charge: 43nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 24A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 62ns
Rise Time: 8ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 1870pF
Series: MDmesh DM2
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
1,825
USA:
1,825
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$2.23
USD
Quantity
Unit Price
1
$2.23
30
$2.19
125
$2.15
400
$2.13
1,500+
$2.07
Product Variant Information section