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Manufacturer Part #

STU10NM60N

Single N-Channel 650 V 0.55 Ohm 19 nC 70 W MDmesh Mosfet - TO-262

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code:
Product Specification Section
STMicroelectronics STU10NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.55Ω
Rated Power Dissipation: 70W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 32ns
Rise Time: 12ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Height - Max: 9.35mm
Length: 10.4mm
Input Capacitance: 540pF
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
75
Total
$2,670.00
USD
Quantity
Unit Price
75+
$0.89