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STMicroelectronics | STU7N60M2

Manufacturer Part #

STU7N60M2

N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STU7N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.95Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 8.8nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 5A
Turn-on Delay Time: 7.6ns
Turn-off Delay Time: 19.3ns
Rise Time: 7.2ns
Fall Time: 15.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 271pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,740.00
USD
Quantity
Unit Price
1
$0.63
75
$0.61
250
$0.595
1,250
$0.58
4,000+
$0.55
Product Variant Information section