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  6. NTH4L045N065SC1

onsemi | NTH4L045N065SC1

Manufacturer Part #

NTH4L045N065SC1

N-Channel 650 V 55 A 187 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTH4L045N065SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 55A
Input Capacitance: 1870pF
Power Dissipation: 187W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
10,800
Factory Lead Time:
16 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,429.00
USD
Quantity
Unit Price
450
$7.62
900+
$7.56
Product Variant Information section