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Manufacturer Part #
FF4MR12W2M1HB11BPSA1
1200 V 170 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:15 per Tray Package Style:Module Mounting Method:Chassis Mount |
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Infineon FF4MR12W2M1HB11BPSA1 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC? MOSFET 1200V Gen. 1.Reason for change:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC? MOSFET 1200V Gen. 1.
Part Status:
-
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FF4MR12W2M1HB11BPSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--silicon-carbide-power-modules-sic-power-modules/ff4mr12w2m1hb11bpsa1-infineon-6183006
Infineon FF4MR12W2M1HB11BPSA1 - Technical Attributes
| Technology: | SiCFET (Silicon Carbide) |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Isolation Voltage-RMS: | 3000V |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 170A |
| Configuration: | Half Bridge |
| Operating Temp Range: | -40°C to +175°C |
| Package Style: | Module |
| Mounting Method: | Chassis Mount |
Available Packaging
Package Qty:
15 per Tray
Package Style:
Module
Mounting Method:
Chassis Mount