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Référence fabricant
SI8816EDB-T2-E1
N-Channel 30 V 0.109 Ohm 2.4 nC Power Mosfet
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel | ||||||||||
| Code de date: | |||||||||||
Vishay SI8816EDB-T2-E1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI8816EDB-T2-E1&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/si8816edb-t2-e1-vishay-2036869
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI8816EDB-T2-E1&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/si8816edb-t2-e1-vishay-2036869
Vishay SI8816EDB-T2-E1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.109Ω |
| Rated Power Dissipation: | 0.9|W |
| Qg Gate Charge: | 2.4nC |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel