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Manufacturer Part #

SI9407BDY-T1-GE3

Single P-Channel 60 V 2.4 W 22 nC Silicon Surface Mount Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2513
Product Specification Section
Vishay SI9407BDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 2.4W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.2A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 40ns
Rise Time: 105ns
Fall Time: 45ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.55mm
Length: 5mm
Input Capacitance: 600pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$925.00
USD
Quantity
Unit Price
2,500
$0.37
5,000
$0.365
10,000
$0.36
12,500+
$0.355
Product Variant Information section