Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
ZXTN25100DGTA
ZXTN25100 Series NPN 5.3 W 100 V 3 A SMT General Purpose Transistor - SOT-223
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Diodes Incorporated | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Reel Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Diodes Incorporated ZXTN25100DGTA - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
*Update to Future PCN 40708*REV01: 1) Clarified part marking diagrams for SM-8 devices, and SOT26 device (P/N DRDC3105E6-7 only)2) Adding two affected part numbers: ZHCS2000TA and ZLLS2000TA (both in SOT-26 package)In order to improve product traceability, Diodes will add date code information to the part marking of part numbers. Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites. There is no change to fit or function of the affected products.
Addition of Date Code Information to Part MarkingIn order to improve product traceability, Diodes will add date code information to the part marking of below listed part numbers.Affected products are manufactured in SM-8, SOT-26 or SOT-223 packages at Diodes’ internal Assembly & Test sites.There is no change to fit or function of the affected products.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=ZXTN25100DGTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--bipolar-transistors/zxtn25100dgta-diodes-incorporated-1048911
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=ZXTN25100DGTA&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--bipolar-transistors/zxtn25100dgta-diodes-incorporated-1048911
Diodes Incorporated ZXTN25100DGTA - Caractéristiques techniques
| Polarity: | NPN |
| Type: | General Purpose |
| CE Voltage-Max: | 100V |
| Collector Current Max: | 3A |
| Power Dissipation-Tot: | 5.3W |
| Collector - Base Voltage: | 180V |
| Collector - Emitter Saturation Voltage: | 500V |
| Emitter - Base Voltage: | 7V |
| DC Current Gain-Min: | 10 |
| Collector - Current Cutoff: | 50nA |
| Configuration: | Single |
| Frequency - Transition: | 175MHz |
| Operating Temp Range: | -55°C to +150°C |
| Rise Time: | 115ns |
| Fall Time: | 158ns |
| Input Capacitance: | 154pF |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Méthode de montage :
Surface Mount