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Référence fabricant

MJD253T4G

MJD Series 100 V 4 A PNP Complementary Silicon Plastic Power Transistor TO-252-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2514
Product Specification Section
onsemi MJD253T4G - Caractéristiques techniques
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 4A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 40
Style d'emballage :  TO-252-3 (DPAK)
Fonctionnalités et applications

The MJD253T4G is a part of MJD series PNP Bipolar Power Transistor. It has a storage temperature ranging from -65°C to +150°C and its available in TO-252-3 package.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Features:

  • Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    • hFE = 40 (Min) @ IC= 200 mAdc
    • hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves
  • Lead Formed Version in 16 mm Tape and Reel
  • Low Collector-Emitter Saturation Voltage:
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product
    • fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage
    • ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
Pricing Section
Stock global :
2 500
États-Unis:
2 500
Sur commande :Order inventroy details
20 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
16 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
420,00 $
USD
Quantité
Prix unitaire
2 500
$0.168
5 000
$0.166
7 500
$0.165
10 000
$0.164
12 500+
$0.161
Product Variant Information section