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Manufacturer Part #
IGB110S101XTMA1
100 V 23 A 9.4 mOhm N-Channel PQFN 3x3 GaN MOSFET
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
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Product Specification Section
Infineon IGB110S101XTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
N/A
HTS Code:
N/A
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Infineon IGB110S101XTMA1 - Technical Attributes
Attributes Table
| Technology: | GaNFET (Gallium Nitride) |
| Fet Type: | N-Ch |
| Drain Current: | 9A |
| No of Channels: | 1 |
| Qg Gate Charge: | 4.4nC |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Gate-Source Voltage-Max [Vgss]: | 6.5V |
| Input Capacitance: | 340pF |
| Rated Power Dissipation: | 15W |
| Operating Temp Range: | -40°C to +150°C |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
5,000
$0.66
10,000+
$0.645
Product Variant Information section