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Diodes Incorporated | DMN63D8LW-13

Manufacturer Part #

DMN63D8LW-13

Single N-Channel 30 V 3.8 Ohm 0.4 nC 420 mW Silicon SMT Mosfet - SOT-323

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN63D8LW-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3.8Ω
Rated Power Dissipation: 420mW
Qg Gate Charge: 0.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 380mA
Turn-on Delay Time: 2.3ns
Turn-off Delay Time: 11.4ns
Rise Time: 3.9ns
Fall Time: 16.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 1mm
Length: 2.2mm
Input Capacitance: 23.2pF
Package Style:  SOT-323 (SC-70)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Total
$247.00
USD
Quantity
Unit Price
10,000
$0.0247
30,000
$0.0241
50,000
$0.0239
150,000
$0.0233
250,000+
$0.0229
Product Variant Information section