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onsemi | FQP11N40C

Manufacturer Part #

FQP11N40C

N-Channel 400 V 530 mOhm 35 nC Flange Mount Mosfet - TO-220

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2525
Product Specification Section
onsemi FQP11N40C - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 400V
Drain-Source On Resistance-Max: 530mΩ
Rated Power Dissipation: 135|W
Qg Gate Charge: 35nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FQP11N40C is a 400 V 530 mΩ N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 10.5 A, 400 V, RDS(on) = 0.5 Ω @VGS = 10 V
  • Low gate charge ( typical 28 nC)
  • Low Crss ( typical 85 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficiency S.M.P.S
  • Electronic lamp ballasts
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,060.00
USD
Quantity
Unit Price
1,000
$1.06
2,000
$1.05
4,000
$1.04
5,000+
$1.03
Product Variant Information section