Référence fabricant
IAUC100N04S6L020ATMA1
Optimos‑6 Série 40V 100A 2mΩ N‑Channel Automotive puissance Mosfet TSDSON‑8
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :5000 par Reel Style d'emballage :TDSON-8 Méthode de montage :Surface Mount |
||||||||||
| Code de date: | |||||||||||
Infineon IAUC100N04S6L020ATMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description:Introduction of an additional wafer production and wafer test location at Infineon Technologies Austria AG, Villach, Austria for product family AFET6_40V and Introduction of an additional assembly production and final test location PT Infineon Technologies Batam, Batam, Indonesia for AFET6_40V in PG-TDSON-8Reason:Due to a continuously rising demand for Infineon automotive products
Statut du produit:
Infineon IAUC100N04S6L020ATMA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 2.04mΩ |
| Rated Power Dissipation: | 75W |
| Qg Gate Charge: | 34nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 4ns |
| Turn-off Delay Time: | 18ns |
| Rise Time: | 2ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.6V |
| Technology: | OptiMOS |
| Input Capacitance: | 2111pF |
| Series: | OptiMOS 6 |
| Style d'emballage : | TDSON-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
5000 par Reel
Style d'emballage :
TDSON-8
Méthode de montage :
Surface Mount