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Infineon | IPB60R120P7ATMA1

Manufacturer Part #

IPB60R120P7ATMA1

Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
Infineon IPB60R120P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.12Ω
Rated Power Dissipation: 95W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 26A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 81ns
Rise Time: 14ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1544pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:Order inventroy details
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,520.00
USD
Quantity
Unit Price
1,000
$1.52
2,000
$1.51
3,000
$1.50
5,000+
$1.48
Product Variant Information section