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Manufacturer Part #
IPI041N12N3GAKSA1
Single N-Channel 120 V 4.1 mOhm 158 nC OptiMOS™ Power Mosfet - TO-262-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-262 (I2PAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPI041N12N3GAKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Infineon IPI041N12N3GAKSA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 120V |
| Drain-Source On Resistance-Max: | 4.1mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 158nC |
| Package Style: | TO-262 (I2PAK) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
500
$2.57
1,000
$2.55
1,500
$2.53
2,500+
$2.50
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-262 (I2PAK)
Mounting Method:
Through Hole