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Infineon | IPP072N10N3GXKSA1

Manufacturer Part #

IPP072N10N3GXKSA1

Single N-Channel 100 V 7.2 mOhm 68 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP072N10N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 7.2mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 37ns
Rise Time: 37ns
Fall Time: 9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.5V
Technology: Si
Height - Max: 9.45mm
Length: 10.36mm
Input Capacitance: 3690pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$490.00
USD
Quantity
Unit Price
500
$0.98
1,000
$0.965
2,000
$0.95
2,500
$0.945
7,500+
$0.92
Product Variant Information section