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Manufacturer Part #

IPT007N06NATMA1

Single N-Channel 60 V 0.75 mOhm 216 nC OptiMOS™ Power Mosfet - HSOF-8-1

Product Specification Section
Infineon IPT007N06NATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.75mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 216nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300A
Turn-on Delay Time: 38ns
Turn-off Delay Time: 76ns
Rise Time: 18ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 16000pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
18,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$6,640.00
USD
Quantity
Unit Price
2,000+
$3.32