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Infineon | IPT60R028G7XTMA1

Manufacturer Part #

IPT60R028G7XTMA1

N-Channel 600 V 75 A1.44 mA 391 W Surface Mount Power Mosfet - PG-HSOF-8-2

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Infineon IPT60R028G7XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 28mΩ
Rated Power Dissipation: 391W
Qg Gate Charge: 123nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 75A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 100ns
Rise Time: 9ns
Fall Time: 2.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 4820pF
Series: CoolMOS G7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$16,400.00
USD
Quantity
Unit Price
2,000+
$8.20
Product Variant Information section