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Référence fabricant
IRF1407PBF
Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2510 | ||||||||||
Infineon IRF1407PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF1407PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf1407pbf-infineon-6183100
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF1407PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf1407pbf-infineon-6183100
Infineon IRF1407PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 7.8mΩ |
| Rated Power Dissipation: | 330W |
| Qg Gate Charge: | 160nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 130A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 150ns |
| Rise Time: | 150ns |
| Fall Time: | 140ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 5600pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
International Rectifier has set an important precedent in MOSFET technology through the IRF1407 series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IR offers unique technological solutions. Ideal for AC-DC servers, laptop adapters, and desktop power supplies, Vishay strives to meet ongoing customer demand backed by industry-leading quality.
Perfect for both commercial and industrial applications, the IRF1407 (this part is lead free) has the capacity to operate at 75V within an operating temperature range of 175 degrees C. The net result translates to a lower resistance (RDS (on) = 7.8 mOhms). Repetitively avalanche rated, the IRF1407 is able to reduce power dissipation levels to approximately 50 watts. The IRF1407 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-220 package format.
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole